Disorder Control in Crystalline GeSb₂Te₄ Using High Pressure.

ABSTRACT: Electronic phase-change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase-change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning the atomic disorder in the crystalline phase with heat treatment, because the disorder can lead to the localization of the electronic states and, thus, hamper the electron transport. The goal of this work is to achieve and explore multiple disordered configurations in PCMs by applying high pressure. Large-scale ab initio molecular dynamics simulations demonstrate that pressure can lower the energy barrier for the antisite migration in crystalline PCMs. The accumulation of these antisite atoms lar

SUBMITTER: Xu M 

PROVIDER: S-EPMC5034799 | biostudies-literature | 2015 Aug

REPOSITORIES: biostudies-literature