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Improved PEDOT:PSS/c-Si hybrid solar cell using inverted structure and effective passivation.


ABSTRACT: The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrier lifetime has been significantly increased and the power conversion efficiency (PCE) of the inverted HSC is improved to as high as 16.1% with an open-circuit voltage (Voc) of 634?mV, fill factor (FF) of 70.5%, and short-circuit current density (Jsc) of 36.2?mA cm-2, an improvement of 33% over the control device. The improvements are ascribed to inverted configuration and a-Si:H passivation, which can increase photon carrier generation and reduce carrier recombination, respectively. Both of them will benefit the photovoltaic performance and should be considered as effective design strategies to improve the performance of organic/c-Si HSCs.

SUBMITTER: Zhang X 

PROVIDER: S-EPMC5057131 | biostudies-literature | 2016 Oct

REPOSITORIES: biostudies-literature

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Improved PEDOT:PSS/c-Si hybrid solar cell using inverted structure and effective passivation.

Zhang Xisheng X   Yang Dong D   Yang Zhou Z   Guo Xiaojia X   Liu Bin B   Ren Xiaodong X   Liu Shengzhong Frank SF  

Scientific reports 20161011


The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrie  ...[more]

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