Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Solution-Processed Vertically Stacked Complementary Organic Circuits with Inkjet-Printed Routing.

ABSTRACT: The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM by matching the driving strengths of the PFET and the NFET by independently adjusting the dielectric capacitance of each type of transistor. Using ideally balanced inverters with the transistor-on-transistor structure, the first examples of universal logic gates by inkjet-printed routing are demonstrated. It is believed that this work can be extended to large-scale complementary integrated circuits with a high transistor density, simpler routing path, and high yield.

SUBMITTER: Kwon J

PROVIDER: S-EPMC5067658 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Solution-Processed Vertically Stacked Complementary Organic Circuits with Inkjet-Printed Routing.

Kwon Jimin J Kyung Sujeong S Yoon Sejung S Kim Jae-Joon JJ Jung Sungjune S

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20160219 5

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM by matching the driving strengths of the PFET and the NFET by independently adjusting the dielectric cap ...[more]

PMID: 27812468

Similar Datasets

Design principles for electronic charge transport in solution-processed vertically stacked 2D perovskite quantum wells.

Project description:State-of-the-art quantum-well-based devices such as photovoltaics, photodetectors, and light-emission devices are enabled by understanding the nature and the exact mechanism of electronic charge transport. Ruddlesden-Popper phase halide perovskites are two-dimensional solution-processed quantum wells and have recently emerged as highly efficient semiconductors for solar cell approaching 14% in power conversion efficiency. However, further improvements will require an understanding of the charge transport mechanisms, which are currently unknown and further complicated by the presence of strongly bound excitons. Here, we unambiguously determine that dominant photocurrent collection is through electric field-assisted electron-hole pair separation and transport across the potential barriers. This is revealed by in-depth device characterization, coupled with comprehensive device modeling, which can self-consistently reproduce our experimental findings. These findings establish the fundamental guidelines for the molecular and device design for layered 2D perovskite-based photovoltaics and optoelectronic devices, and are relevant for other similar quantum-confined systems.

| S-EPMC5976721 | biostudies-literature

Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories.

Project description:We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record.

| S-EPMC4549707 | biostudies-literature

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Project description:Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

| S-EPMC2783010 | biostudies-literature

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

Project description:Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

| S-EPMC5509261 | biostudies-other

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters.

Project description:Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here, we report the vertical integration of multi-heterostructures of layered materials for the fabrication of a new generation of vertical field-effect transistors (VFETs) with a room temperature on-off ratio > 10(3) and a high current density of up to 5,000 A cm(-2). An n-channel VFET is created by sandwiching few-layer MoS(2) as the semiconducting channel between a monolayer graphene sheet and a metal thin film. This approach offers a general strategy for the vertical integration of p- and n-channel transistors for high-performance logic applications. As an example, we demonstrate a complementary inverter with a larger-than-unity voltage gain by vertically stacking graphene, Bi(2)Sr(2)Co(2)O(8) (p-channel), graphene, MoS(2) (n-channel) and a metal thin film in sequence. The ability to simultaneously achieve a high on-off ratio, a high current density and a logic function in such vertically stacked multi-heterostructures can open up possibilities for three-dimensional integration in future electronics.

| S-EPMC4249642 | biostudies-literature

Experimental Characterization of Inkjet-Printed Stretchable Circuits for Wearable Sensor Applications.

Project description:This paper introduces a cost-effective method for the fabrication of stretchable circuits on polydimethylsiloxane (PDMS) using inkjet printing of silver nanoparticle ink. The fabrication method, presented here, allows for the development of fully stretchable and wearable sensors. Inkjet-printed sinusoidal and horseshoe patterns are experimentally characterized in terms of the effect of their geometry on stretchability, while maintaining adequate electrical conductivity. The optimal fabricated circuit, with a horseshoe pattern at an angle of 45°, is capable of undergoing an axial stretch up to a strain of 25% with a resistance under 800 ?. The conductivity of the circuit is fully reversible once it is returned to its pre-stretching state. The circuit could also undergo up to 3000 stretching cycles without exhibiting a significant change in its conductivity. In addition, the successful development of a novel inkjet-printed fully stretchable and wearable version of the conventional pulse oximeter is demonstrated. Finally, the resulting sensor is evaluated in comparison to its commercially available counterpart.

| S-EPMC6210026 | biostudies-literature

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

Project description:Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

| S-EPMC5286420 | biostudies-literature

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

Project description:Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

| S-EPMC5071863 | biostudies-literature

Surface Passivation Treatment to Improve Performance and Stability of Solution-Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates.

Project description:Hybrid integration of n-type oxide with p-type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution-processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V-1 s-1 with high on-off current ratio of 108 . The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low-temperature solution-processed metal oxide semiconductors.

| S-EPMC8655209 | biostudies-literature

Strong Photocurrent from Two-Dimensional Excitons in Solution-Processed Stacked Perovskite Semiconductor Sheets.

Project description:Room-temperature photocurrent measurements in two-dimensional (2D) inorganic-organic perovskite devices reveal that excitons strongly contribute to the photocurrents despite possessing binding energies over 10 times larger than the thermal energies. The p-type (C6H9C2H4NH3)2PbI4 liberates photocarriers at metallic Schottky aluminum contacts, but incorporating electron- and hole-transport layers enhances the extracted photocurrents by 100-fold. A further 10-fold gain is found when TiO2 nanoparticles are directly integrated into the perovskite layers, although the 2D exciton semiconducting layers are not significantly disrupted. These results show that strong excitonic materials may be useful as photovoltaic materials despite high exciton binding energies and suggest mechanisms to better understand the photovoltaic properties of the related three-dimensional perovskites.

| S-EPMC4666456 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data