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Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor.


ABSTRACT: Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9?eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

SUBMITTER: Son J 

PROVIDER: S-EPMC5109464 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature

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Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor.

Son Jangyup J   Lee Soogil S   Kim Sang Jin SJ   Park Byung Cheol BC   Lee Han-Koo HK   Kim Sanghoon S   Kim Jae Hoon JH   Hong Byung Hee BH   Hong Jongill J  

Nature communications 20161110


Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modi  ...[more]

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