Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy.

ABSTRACT: Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co₄₀Fe₄₀B₂₀/MgO/TiO₂ structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electri

SUBMITTER: Lin W 

PROVIDER: S-EPMC5116098 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature