Ontology highlight
ABSTRACT:
SUBMITTER: Guo L
PROVIDER: S-EPMC5120260 | biostudies-literature | 2016 Nov
REPOSITORIES: biostudies-literature
Scientific reports 20161123
The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the barrier thickness is thinner and the channel width is narrower. The experimental results demonstrate t ...[more]