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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

ABSTRACT: Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O₂ gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67?cm²/Vs, a threshold voltage of 6.4?V and an on/off current ratio of 4.5?×?10⁵. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5?mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

SUBMITTER: Kumaresan Y

PROVIDER: S-EPMC5120347 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature

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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

Kumaresan Yogeenth Y Pak Yusin Y Lim Namsoo N Kim Yonghun Y Park Min-Ji MJ Yoon Sung-Min SM Youn Hyoc-Min HM Lee Heon H Lee Byoung Hun BH Jung Gun Young GY

Scientific reports 20161123

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical ...[more]

PMID: 27876893

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