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Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene.

ABSTRACT: A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b']dithiophene ((C₁₂H₂₅)₂-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (?) greater than 1?cm²?V^-1 s^-1. The highest ? value in the thin-film FETs fabricated in this study was 5.4?cm²?V^-1 s^-1, when a 150?nm-thick ZrO₂ gate dielectric was used. This implies that (C₁₂H₂₅)₂-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

SUBMITTER: Kubozono Y

PROVIDER: S-EPMC5138603 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature

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Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene.

Kubozono Yoshihiro Y Hyodo Keita K Hamao Shino S Shimo Yuma Y Mori Hiroki H Nishihara Yasushi Y

Scientific reports 20161206

A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b']dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V-1 s-1. The highest μ value in the thin- ...[more]

PMID: 27922104

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