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Passivation and characterization of charge defects in ambipolar silicon quantum dots.

ABSTRACT: In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al2O3 overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180?nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of 10?meV in both the positive and negative charge state.

SUBMITTER: Spruijtenburg PC

PROVIDER: S-EPMC5138628 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature

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Passivation and characterization of charge defects in ambipolar silicon quantum dots.

Spruijtenburg Paul C PC Amitonov Sergey V SV Mueller Filipp F van der Wiel Wilfred G WG Zwanenburg Floris A FA

Scientific reports 20161206

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al<sub>2</sub>O<sub>3</sub> overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 n ...[more]

PMID: 27922048

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