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Depth resolved lattice-charge coupling in epitaxial BiFeO₃ thin film.

ABSTRACT: For epitaxial films, a critical thickness (t_c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t_c in BiFeO₃ thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO₃/SrRuO₃/SrTiO₃ substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO₃ film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

SUBMITTER: Lee HJ

PROVIDER: S-EPMC5144002 | biostudies-literature |

REPOSITORIES: biostudies-literature

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