Current crowding mediated large contact noise in graphene field-effect transistors.

ABSTRACT: The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm²V^-1s^-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingl

SUBMITTER: Karnatak P 

PROVIDER: S-EPMC5155149 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature