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In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySey.

ABSTRACT: A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2-xSbxTe3-ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2-xSbxTe3-ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

SUBMITTER: Tu NH 

PROVIDER: S-EPMC5155151 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature

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In-plane topological p-n junction in the three-dimensional topological insulator Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3-y</sub>Se<sub>y</sub>.

Tu Ngoc Han NH   Tanabe Yoichi Y   Satake Yosuke Y   Huynh Khuong Kim KK   Tanigaki Katsumi K  

Nature communications 20161209

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3-y</sub>Se<sub>y</sub> thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3-y</sub>Se<sub>y</sub> on  ...[more]

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