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Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

ABSTRACT: Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 × 10¹⁹ cm^-3 at 773 K.

SUBMITTER: Duong AT

PROVIDER: S-EPMC5160008 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature

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Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

Duong Anh Tuan AT Nguyen Van Quang VQ Duvjir Ganbat G Duong Van Thiet VT Kwon Suyong S Song Jae Yong JY Lee Jae Ki JK Lee Ji Eun JE Park SuDong S Min Taewon T Lee Jaekwang J Kim Jungdae J Cho Sunglae S

Nature communications 20161212

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a gr ...[more]

PMID: 27941762

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