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Tin Compensation for the SnS Based Optoelectronic Devices.

ABSTRACT: In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51?cm2??V-1?s-1 and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized.

SUBMITTER: Wang SF

PROVIDER: S-EPMC5206617 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature

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Tin Compensation for the SnS Based Optoelectronic Devices.

Wang S F SF Wang W W Fong W K WK Yu Y Y Surya C C

Scientific reports 20170103

In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results cl ...[more]

PMID: 28045033

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