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Tailoring femtosecond 1.5-?m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

ABSTRACT: Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-?m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ?10-?m TSVs on a 100-?m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

SUBMITTER: He F

PROVIDER: S-EPMC5241677 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature

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Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

He Fei F Yu Junjie J Tan Yuanxin Y Chu Wei W Zhou Changhe C Cheng Ya Y Sugioka Koji K

Scientific reports 20170118

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation c ...[more]

PMID: 28098250

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