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Anomalous resistivity upturn in epitaxial L21-Co2MnAl films.

ABSTRACT: Despite of the great scientific and technology interest, highly ordered full-Heusler L21-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

SUBMITTER: Zhu LJ

PROVIDER: S-EPMC5317171 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature

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Anomalous resistivity upturn in epitaxial L21-Co2MnAl films.

Zhu L J LJ Zhao J H JH

Scientific reports 20170220

Despite of the great scientific and technology interest, highly ordered full-Heusler L21-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T1/2 dependence, a robust independence of magnetic fields, and a close ...[more]

PMID: 28218300

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Project description:The growth of SrRuO[Formula: see text] (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO[Formula: see text]-terminated SrTiO[Formula: see text] (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 [Formula: see text] 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to [Formula: see text] 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02 ± 1) reflections, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle ([Formula: see text]), and miscut direction ([Formula: see text]), giving a volume fraction of about 92 [Formula: see text] for [Formula: see text] 26.6 nm and [Formula: see text] (0.14[Formula: see text], 5[Formula: see text]). On the other hand, metallic and ferromagnetic properties were well preserved down to t [Formula: see text] 1.2 nm. Residual resistivity ratio (RRR = [Formula: see text]/[Formula: see text]) reduces from 77.1 for t [Formula: see text] 28.5 nm to 2.5 for t [Formula: see text] 1.2 nm, while [Formula: see text] increases from 2.5 [Formula: see text]cm for t [Formula: see text] 28.5 nm to 131.0 [Formula: see text]cm for t [Formula: see text] 1.2 nm. The ferromagnetic onset temperature ([Formula: see text]) of around 151 K remains nearly unchanged down to t [Formula: see text] 9.0 nm and decreases to 90 K for t [Formula: see text] 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

Dataset Information

Anomalous resistivity upturn in epitaxial L21-Co2MnAl films.

Publications

Anomalous resistivity upturn in epitaxial L2<sub>1</sub>-Co<sub>2</sub>MnAl films.

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