Browse
Submit Data
Databases
API
Help

Dataset Information

19 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

ABSTRACT: ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

SUBMITTER: Zheng Z

PROVIDER: S-EPMC5357981 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Highly Responsive Mid-Infrared Metamaterial Enhanced Heterostructure Photodetector Formed out of Sintered PbSe/PbS Colloidal Quantum Dots.

Project description:Efficient and simple-to-fabricate light detectors in the mid infrared (MIR) spectral range are of great importance for various applications in existing and emerging technologies. Here, we demonstrate compact and efficient photodetectors operating at room temperature in a wavelength range of 2710-4250 nm with responsivities as high as 375 and 4 A/W. Key to the high performance is the combination of a sintered colloidal quantum dot (CQD) lead selenide (PbSe) and lead sulfide (PbS) heterojunction photoconductor with a metallic metasurface perfect absorber. The combination of this photoconductor stack with the metallic metasurface perfect absorber provides an overall ∼20-fold increase of the responsivity compared against reference sintered PbSe photoconductors. More precisely, the introduction of a PbSe/PbS heterojunction increases the responsivity by a factor of ∼2 and the metallic metasurface enhances the responsivity by an order of magnitude. The metasurface not only enhances the light-matter interaction but also acts as an electrode to the detector. Furthermore, fabrication of our devices relies on simple and inexpensive methods. This is in contrast to most of the currently available (state-of-the-art) MIR photodetectors that rely on rather expensive as well as nontrivial fabrication technologies that often require cooling for efficient operation.

| S-EPMC9982815 | biostudies-literature

Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS3 Heterostructure by SCAPS-1D.

Project description:Titanium trisulphide (TiS3) has been widely used in the field of optoelectronics owing to its superb optical and electronic characteristics. In this work, a self-powered photodetector using bulk PbS/TiS3 p-n heterojunction is numerically investigated and analyzed by a Solar Cell Capacitance Simulator in one-Dimension (SCAPS-1D) software. The energy bands, electron-holes generation or recombination rate, current density-voltage (J-V), and spectral response properties have been investigated by SCAPS-1D. To improve the performance of photodetectors, the influence of thickness, shallow acceptor or donor density, and defect density are investigated. By optimization, the optimal thickness of the TiS3 layer and PbS layer are determined to be 2.5 μm and 700 nm, respectively. The density of the superior shallow acceptor (donor) is 1015 (1022) cm-3. High quality TiS3 film is required with the defect density of about 1014 cm-3. For the PbS layer, the maximum defect density is 1017 cm-3. As a result, the photodetector based on the heterojunction with optimal parameters exhibits a good photoresponse from 300 nm to 1300 nm. Under the air mass 1.5 global tilt (AM 1.5G) illuminations, the optimal short-circuit current reaches 35.57 mA/cm2 and the open circuit voltage is about 870 mV. The responsivity (R) and a detectivity (D*) of the simulated photodetector are 0.36 A W-1 and 3.9 × 1013 Jones, respectively. The simulation result provides a promising research direction to further broaden the TiS3-based optoelectronic device.

| S-EPMC8838530 | biostudies-literature

Plasmon-enhanced reduced graphene oxide photodetector with monometallic of Au and Ag nanoparticles at VIS-NIR region.

Project description:Hybrids plasmonic nanoparticles (NPs) and unique 2D graphene significantly enhanced the photoresponse of the photodetectors. The metallic NPs that exhibit localized surface plasmon resonance (LSPR) improves strong light absorption, scattering and localized electromagnetic field by the incident photons depending on the optimum condition of NPs. We report high-performance photodetectors based on reduced graphene oxide (rGO) integrated with monometallic of Au and Ag nanoparticles via a familiar fabrication technique using an electron beam evaporation machine. Under 680 nm illumination of light, our rGO photodetector exhibited the highest performance for Au-rGO with the highest responsivity of 67.46 AW-1 and the highest specific detectivity (2.39 × 1013 Jones). Meanwhile, Ag-rGO achieved the highest responsivity of 17.23 AW-1, specific detectivity (7.17 × 1011 Jones) at 785 nm. The response time are 0.146 µs and 0.135 µs for Au-rGO and Ag-rGO respectively for both wavelengths. The proposed photodetector with combining monometallic and graphene provide a new strategy to construct reliable and next-generation optoelectronic devices at VIS-NIR region.

| S-EPMC8490468 | biostudies-literature

High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering.

Project description:The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10(11) Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.

| S-EPMC4731746 | biostudies-other

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots.

Project description:Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 μs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.

| S-EPMC9506398 | biostudies-literature

Radial heterojunction based on single ZnO-CuxO core-shell nanowire for photodetector applications.

Project description:ZnO-CuxO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a CuxO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-CuxO core-shell nanowire arrays were investigated. Individual ZnO-CuxO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-CuxO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.

| S-EPMC6447533 | biostudies-literature

ZnO thin film-nanowire array homo-structures with tunable photoluminescence and optical band gap.

Project description:The growth and optical behavior of ZnO thin film-nanowire array homo-structures is reported. The ZnO films are deposited on glass substrates by thermal evaporation and subjected to heat treatment at 400 °C for 2 h to achieve crystallinity and stoichiometry. The surface comprises spherical grains or elongated flakes depending on thickness of films. These films are introduced in to a hydrothermal reactor in a medium of zinc acetate and HMTA to realize the nanostructures. The process results in the formation of ZnO nanowires with dimensions that are strongly dependent on the surface microstructure of the ZnO films. The role of temperature (90-180 °C) and duration (10 min to 10 h) of hydrothermal processing is investigated in detail. It is demonstrated that low temperature and short duration are ideal for producing nanowires with diameter < 100 nm, while longer durations and higher temperatures lead to large diameter and long length nanowires. Interestingly, all wires converge to a hexagonal shape with increase in duration or temperature. The lowest diameter of the vertically aligned nanowires is 50 nm and length upto 10 μm is achieved. Optical band gap of the homo-structures is of the order of 3.4-3.5 eV. Raman and photoluminescence spectra indicate the presence of defects in the films. The thin films exhibit a strong defect related photoluminescence peak centred around 550 nm. The nanowires grown on the films display both the UV-near band edge peak as well as the defect related peak. However, the intensity of the defect peak decreases with increase in length of the nanowires indicating that the photoluminescence of the homo-structures can be tuned by changing the surface microstructure of the films and also the aspect ratio of the nanowires.

| S-EPMC9059165 | biostudies-literature

Electrospun Scaffold of Collagen and Polycaprolactone Containing ZnO Quantum Dots for Skin Wound Regeneration.

Project description:Nanofibers (NFs) have been widely used in tissue engineering such as wound healing. In this work, the antibacterial ZnO quantum dots (ZnO QDs) have been incorporated into the biocompatible poly (ε-caprolactone)/collagen (PCL/Col) fibrous scaffolds for wound healing. The as-fabricated PCL-Col/ZnO fibrous scaffolds exhibited good swelling, antibacterial activity, and biodegradation behaviors, which were beneficial for the applications as a wound dressing. Moreover, the PCL-Col/ZnO fibrous scaffolds showed excellent cytocompatibility for promoting cell proliferation. The resultant PCL-Col/ZnO fibrous scaffolds containing vascular endothelial growth factor (VEGF) also exhibited promoted wound-healing effect through promoting expression of transforming growth factor-β (TGF-β) and the vascular factor (CD31) in tissues in the early stages of wound healing. This new electrospun fibrous scaffolds with wound-healing promotion and antibacterial property should be convenient for treating wound healing.Supplementary informationThe online version contains supplementary material available at 10.1007/s42235-021-00115-7.

| S-EPMC8607054 | biostudies-literature

ZnO/Cu2O/Si Nanowire Arrays as Ternary Heterostructure-Based Photocatalysts with Enhanced Photodegradation Performances.

Project description:Ternary ZnO/Cu2O/Si nanowire arrays with vertical regularity were prepared with all-solution processed method at low temperature. In addition to the detailed characterizations of morphologies and crystallographic patterns, the analyses of photoluminescence and photocurrents revealed the sound carrier separation owing from the established step-like band structures. By modeling the photodegradation process of the prepared heterostructures through kinetic investigations and scavenger examinations, the photocatalytic removal of MB dyes was found to follow the second-order kinetic model with reaction constant more than 15.3 times higher than bare Si nanowires and achieved 5.7 times and 3.4 times than ZnO/Si and Cu2O/Si binary heterostructures, respectively. Moreover, the highly stable photoactivity of ZnO/Cu2O/Si photocatalysts was evidenced from the repeated photodegradation tests, which demonstrated the robust photocatalytic efficiency after cycling uses. The facile synthesis along with in-depth mechanism study of such ternary heterostructures could be potential for practical treatment for organic pollutants. KEYWORDS: HeterostructurePhotocatalystSilicon nanowire arraysKinetic study.

| S-EPMC6650520 | biostudies-literature

Graphene/Si-nanowire heterostructure molecular sensors.

Project description:Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

| S-EPMC4064328 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data