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III-nitride core-shell nanorod array on quartz substrates.

ABSTRACT: We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

SUBMITTER: Bae SY

PROVIDER: S-EPMC5366955 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature

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III-nitride core-shell nanorod array on quartz substrates.

Bae Si-Young SY Min Jung-Wook JW Hwang Hyeong-Yong HY Lekhal Kaddour K Lee Ho-Jun HJ Jho Young-Dahl YD Lee Dong-Seon DS Lee Yong-Tak YT Ikarashi Nobuyuki N Honda Yoshio Y Amano Hiroshi H

Scientific reports 20170327

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area ...[more]

PMID: 28345641

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