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Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric.

ABSTRACT: Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10(-5) A · cm(-2) for the gate voltage ranging from -4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.

SUBMITTER: Liu J

PROVIDER: S-EPMC5377369 | biostudies-literature | 2014 Sep

REPOSITORIES: biostudies-literature

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Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric.

Liu Jiangwei J Liao Meiyong M Imura Masataka M Tanaka Akihiro A Iwai Hideo H Koide Yasuo Y

Scientific reports 20140922

Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10(-5) A · cm(-2) for the gate voltage ranging from -4.0 to 2.0 V. The low on- ...[more]

PMID: 25242175

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