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Compact multilayer film structure for angle insensitive color filtering.

ABSTRACT: Here we report a compact multilayer film structure for angle robust color filtering, which is verified by theoretical calculations and experiment results. The introduction of the amorphous silicon in the proposed unsymmetrical resonant cavity greatly reduces the angular sensitivity of the filters, which is confirmed by the analysis of the phase shift within the structure. The temperature of the substrate during the deposition is expressly investigated to obtain the best optical performance with high peak reflectance and good angle insensitive color filtering by compromising the refractive index of dielectric layer and the surface roughness of the multilayer film. And the outlayer of the structure, worked as the anti-reflection layer, have an enormous impact on the filtering performance. This method, described in this paper, can have enormous potential for diverse applications in display, colorful decoration, anti-counterfeiting and so forth.

SUBMITTER: Yang C

PROVIDER: S-EPMC5380129 | biostudies-literature | 2015 Mar

REPOSITORIES: biostudies-literature

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Compact multilayer film structure for angle insensitive color filtering.

Yang Chenying C Shen Weidong W Zhang Yueguang Y Li Kan K Fang Xu X Zhang Xing X Liu Xu X

Scientific reports 20150319

Here we report a compact multilayer film structure for angle robust color filtering, which is verified by theoretical calculations and experiment results. The introduction of the amorphous silicon in the proposed unsymmetrical resonant cavity greatly reduces the angular sensitivity of the filters, which is confirmed by the analysis of the phase shift within the structure. The temperature of the substrate during the deposition is expressly investigated to obtain the best optical performance with ...[more]

PMID: 25788330

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Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

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Compact multilayer film structure for angle insensitive color filtering.

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Compact multilayer film structure for angle insensitive color filtering.

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