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Probing defects in nitrogen-doped Cu2O.

ABSTRACT: Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

SUBMITTER: Li J

PROVIDER: S-EPMC5384195 | biostudies-literature | 2014 Nov

REPOSITORIES: biostudies-literature

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Probing defects in nitrogen-doped Cu2O.

Li Junqiang J Mei Zengxia Z Liu Lishu L Liang Huili H Azarov Alexander A Kuznetsov Andrej A Liu Yaoping Y Ji Ailing A Meng Qingbo Q Du Xiaolong X

Scientific reports 20141128

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temper ...[more]

PMID: 25430516

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