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A nanofabricated, monolithic, path-separated electron interferometer.


ABSTRACT: Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20??m. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope grid by gallium focused-ion-beam milling. Using this interferometer, we obtain interference fringes in a Mach-Zehnder geometry in an unmodified 200?kV transmission electron microscope. The fringes have a period of 0.32?nm, which corresponds to the [1?1?1] lattice planes of silicon, and a maximum contrast of 15%. We use convergent-beam electron diffraction to quantify grating alignment and coherence. This design can potentially be scaled to millimeter-scale, and used in electron holography. It could also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.

SUBMITTER: Agarwal A 

PROVIDER: S-EPMC5432008 | biostudies-literature | 2017 May

REPOSITORIES: biostudies-literature

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A nanofabricated, monolithic, path-separated electron interferometer.

Agarwal Akshay A   Kim Chung-Soo CS   Hobbs Richard R   Dyck Dirk van DV   Berggren Karl K KK  

Scientific reports 20170510 1


Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20 μm. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron micr  ...[more]

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