Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO_3-δ epitaxial thin films.

ABSTRACT: We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO_3-δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T _D. The modulation in tensile strain and T _D tended to increase oxygen deficiency (δ) in NdNiO_3-δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T _MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect se

SUBMITTER: Heo S 

PROVIDER: S-EPMC5498495 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature