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Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers.


ABSTRACT: High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 ?m, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 ? cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 ?V/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

SUBMITTER: Apreutesei M 

PROVIDER: S-EPMC5507149 | biostudies-literature | 2017

REPOSITORIES: biostudies-literature

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Thermoelectric La-doped SrTiO<sub>3</sub> epitaxial layers with single-crystal quality: from nano to micrometers.

Apreutesei Mihai M   Debord Régis R   Bouras Mohamed M   Regreny Philippe P   Botella Claude C   Benamrouche Aziz A   Carretero-Genevrier Adrian A   Gazquez Jaume J   Grenet Geneviève G   Pailhès Stéphane S   Saint-Girons Guillaume G   Bachelet Romain R  

Science and technology of advanced materials 20170620 1


High-quality thermoelectric La<sub>0.2</sub>Sr<sub>0.8</sub>TiO<sub>3</sub> (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO<sub>3</sub>(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10<sup>-4</sup> Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-dope  ...[more]

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