Progress to a Gallium-Arsenide Deep-Center Laser

ABSTRACT: Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm

SUBMITTER: Pan J 

PROVIDER: S-EPMC5513387 | biostudies-literature | 2009 Oct

REPOSITORIES: biostudies-literature