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Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film.


ABSTRACT: Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge2Sb2Te5 (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the atomic configurations of f- and h-lattices of GST alloy and the transition mechanisms have been extensively studied, the real transition process should be more complex than previous explanations, e.g. vacancy-ordering model for f-to-h transition. In this study, dynamic crystallization procedure of GST thin film was directly characterized by in situ heating transmission electron microscopy. We reveal that the equilibrium to h-phase is more like an abnormal grain growth process driven by surface energy anisotropy. More specifically, [0001]-oriented h-grains with the lowest surface energy grow much faster by consuming surrounding small grains, no matter what the crystallographic reconfigurations would be on the frontier grain-growth boundaries. We argue the widely accepted vacancy-ordering mechanism may not be indispensable for the large-scale f-to-h grain growth procedure. The real-time observations in this work contribute to a more comprehensive understanding of the crystallization behavior of GST thin film and can be essential for guiding its optimization to achieve high-performance PCM applications.

SUBMITTER: Zheng Y 

PROVIDER: S-EPMC5517630 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature

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Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Film.

Zheng Yonghui Y   Cheng Yan Y   Huang Rong R   Qi Ruijuan R   Rao Feng F   Ding Keyuan K   Yin Weijun W   Song Sannian S   Liu Weili W   Song Zhitang Z   Feng Songlin S  

Scientific reports 20170719 1


Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the atomic configurations of f- and h-lattices of GST alloy and the transition mechanisms have been extensively studied, the real transition process should be more complex than pr  ...[more]

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