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Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics.


ABSTRACT: The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on /I off value of >102, an on-current density per channel width of 2.16?×?10-4?A/mm at VDS?=?0.4?V, and a field-effect hole mobility of 1.12?cm2/V?·?s in addition to the low operation voltage of <-0.5?V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.

SUBMITTER: Byeon HH 

PROVIDER: S-EPMC5519712 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature

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Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics.

Byeon Hye-Hyeon HH   Kim Kein K   Kim Woong W   Yi Hyunjung H  

Scientific reports 20170720 1


The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on  ...[more]

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