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Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

ABSTRACT: Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7?×?7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300?×?2300 nm², which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7?×?7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

SUBMITTER: Lee WJ

PROVIDER: S-EPMC5573312 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature

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Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

Lee Wook-Jae WJ Kim Hyunseok H You Jong-Bum JB Huffaker Diana L DL

Scientific reports 20170825 1

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm<sup>2</sup>, which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, whic ...[more]

PMID: 28842698

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