Origin of the emergence of higher T _c than bulk in iron chalcogenide thin films.

ABSTRACT: Fabrication of epitaxial FeSe_xTe_1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T _c) by more than ~40% than their bulk T _c. Intriguingly, T _c enhancement in FeSe_xTe_1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T _c enhancement have been reported, but they remain controversial in universally explaining the T _c improvement in the FeSe_xTe_1-x films. In this report, we demonstrate that the controversies over the mechanism of T _c enhancement are due to the abnormal changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T _c enhancement in FeSe_0.5Te_0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe_xTe_1-x thin films were fabricated via PLD using a Fe_0.94Se_0.45Te_0.55 target, the precisely measured composition indicates a Se-rich FeSe_xTe_1-x (0.6?xTe_1-x, based on first principle calculations.

SUBMITTER: Seo S 

PROVIDER: S-EPMC5577040 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature