Unknown

Dataset Information

0

K-? crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure.


ABSTRACT: Monolayer MoS2 is a promising material for optoelectronics applications owing to its direct bandgap, enhanced Coulomb interaction, strong spin-orbit coupling, unique valley pseudospin degree of freedom, etc. It can also be implemented for novel spintronics and valleytronics devices at atomic scale. The band structure of monolayer MoS2 is well known to have a direct gap at K (K') point, whereas the second lowest conduction band minimum is located at ? point, which may interact with the valence band maximum at K point, to make an indirect optical bandgap transition. We experimentally demonstrate the direct-to-indirect bandgap transition by measuring the photoluminescence spectra of monolayer MoS2 under hydrostatic pressure at room temperature. With increasing pressure, the direct transition shifts at a rate of 49.4 meV/GPa, whereas the indirect transition shifts at a rate of -15.3 meV/GPa. We experimentally extract the critical transition point at the pressure of 1.9 GPa, in agreement with first-principles calculations. Combining our experimental observation with first-principles calculations, we confirm that this transition is caused by the K-? crossover in the conduction band.

SUBMITTER: Fu L 

PROVIDER: S-EPMC5669610 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

altmetric image

Publications

K-Λ crossover transition in the conduction band of monolayer MoS<sub>2</sub> under hydrostatic pressure.

Fu Lei L   Wan Yi Y   Tang Ning N   Ding Yi-Min YM   Gao Jing J   Yu Jiachen J   Guan Hongming H   Zhang Kun K   Wang Weiying W   Zhang Caifeng C   Shi Jun-Jie JJ   Wu Xiang X   Shi Su-Fei SF   Ge Weikun W   Dai Lun L   Shen Bo B  

Science advances 20171103 11


Monolayer MoS<sub>2</sub> is a promising material for optoelectronics applications owing to its direct bandgap, enhanced Coulomb interaction, strong spin-orbit coupling, unique valley pseudospin degree of freedom, etc. It can also be implemented for novel spintronics and valleytronics devices at atomic scale. The band structure of monolayer MoS<sub>2</sub> is well known to have a direct gap at K (K') point, whereas the second lowest conduction band minimum is located at Λ point, which may intera  ...[more]

Similar Datasets

| S-EPMC7952594 | biostudies-literature
| S-EPMC6649064 | biostudies-literature
| S-EPMC6572751 | biostudies-literature
| S-EPMC7846580 | biostudies-literature
| S-EPMC5717150 | biostudies-literature
| S-EPMC6811529 | biostudies-literature
| S-EPMC10982932 | biostudies-literature
| S-EPMC5975547 | biostudies-literature
| S-EPMC7736870 | biostudies-literature
| S-EPMC6430794 | biostudies-literature