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Spatially Resolved Thermometry of Resistive Memory Devices.

ABSTRACT: The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO₂, TiO₂ and Ge₂Sb₂Te₅ (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 28?±?8 m²K/GW at GST-SiO₂ interfaces and an effective thermopower 350?±?50 µV/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices.

SUBMITTER: Yalon E

PROVIDER: S-EPMC5681698 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

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Spatially Resolved Thermometry of Resistive Memory Devices.

Yalon Eilam E Deshmukh Sanchit S Muñoz Rojo Miguel M Lian Feifei F Neumann Christopher M CM Xiong Feng F Pop Eric E

Scientific reports 20171110 1

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO2, TiO2 and Ge2Sb2Te5 ( ...[more]

PMID: 29127371

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