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Quantitative TEM imaging of the magnetostructural and phase transitions in FeRh thin film systems.

ABSTRACT: Equi-atomic FeRh is a very interesting material as it undergoes a magnetostructural transition from an antiferromagnetic (AF) to a ferromagnetic (FM) phase between 75-105?°C. Its ability to present phase co-existence separated by domain walls (DWs) above room temperature provides immense potential for exploitation of their DW motion in spintronic devices. To be able to effectively control the DWs associated with AF/FM coexistence in FeRh thin films we must fully understand the magnetostructural transition and thermomagnetic behaviour of DWs at a localised scale. Here we present a transmission electron microscopy investigation of the transition in planar FeRh thin-film samples by combining differential phase contrast (DPC) magnetic imaging with in situ heating. We perform quantitative measurements from individual DWs as a function of temperature, showing that FeRh on NiAl exhibits thermomagnetic behaviour consistent with the transition from AF to FM. DPC imaging of an FeRh sample with HF-etched substrate reveals a state of AF/FM co-existence and shows the transition from AF to FM regions proceeds via nucleation of small vortex structures, which then grow by combining with newly nucleated vortex states into larger complex magnetic domains, until it is in a fully-FM state.

SUBMITTER: Almeida TP

PROVIDER: S-EPMC5736605 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature

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Quantitative TEM imaging of the magnetostructural and phase transitions in FeRh thin film systems.

Almeida Trevor P TP Temple Rowan R Massey Jamie J Fallon Kayla K McGrouther Damien D Moore Thomas T Marrows Christopher H CH McVitie Stephen S

Scientific reports 20171219 1

Equi-atomic FeRh is a very interesting material as it undergoes a magnetostructural transition from an antiferromagnetic (AF) to a ferromagnetic (FM) phase between 75-105 °C. Its ability to present phase co-existence separated by domain walls (DWs) above room temperature provides immense potential for exploitation of their DW motion in spintronic devices. To be able to effectively control the DWs associated with AF/FM coexistence in FeRh thin films we must fully understand the magnetostructural ...[more]

PMID: 29259255

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Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

Dataset Information

Quantitative TEM imaging of the magnetostructural and phase transitions in FeRh thin film systems.

Publications

Quantitative TEM imaging of the magnetostructural and phase transitions in FeRh thin film systems.

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