Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain.

ABSTRACT: Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.

SUBMITTER: Kim H

PROVIDER: S-EPMC5755578 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain.

Kim Honggyu H Meng Yifei Y Kwon Ji-Hwan JH Rouviére Jean-Luc JL Zuo Jian Min JM

IUCrJ 20180101 Pt 1

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precisi ...[more]

PMID: 29354272

Similar Datasets

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers.

Project description:We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown with thicker InAs layers (≥3 ML) are under compressive strain. As the InAs thickness is increased above 5 ML, the insertion of the InAs layer becomes less effective in the strain relaxation, leaving residual strain in GaSb films. This leads to the elastic deformation of the GaSb lattice, giving rise to the increase in the peak width of X-ray rocking curves.

| S-EPMC6643550 | biostudies-literature

Atomic layer confined vacancies for atomic-level insights into carbon dioxide electroreduction.

Project description:The role of oxygen vacancies in carbon dioxide electroreduction remains somewhat unclear. Here we construct a model of oxygen vacancies confined in atomic layer, taking the synthetic oxygen-deficient cobalt oxide single-unit-cell layers as an example. Density functional theory calculations demonstrate the main defect is the oxygen(II) vacancy, while X-ray absorption fine structure spectroscopy reveals their distinct oxygen vacancy concentrations. Proton transfer is theoretically/experimentally demonstrated to be a rate-limiting step, while energy calculations unveil that the presence of oxygen(II) vacancies lower the rate-limiting activation barrier from 0.51 to 0.40 eV via stabilizing the formate anion radical intermediate, confirmed by the lowered onset potential from 0.81 to 0.78 V and decreased Tafel slope from 48 to 37 mV dec-1. Hence, vacancy-rich cobalt oxide single-unit-cell layers exhibit current densities of 2.7 mA cm-2 with ca. 85% formate selectivity during 40-h tests. This work establishes a clear atomic-level correlation between oxygen vacancies and carbon dioxide electroreduction.

| S-EPMC5321757 | biostudies-literature

Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: the effect of epitaxial overgrowth.

Project description:While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowires with superior properties, a precise knowledge of the surface structure and morphology at different stages of this type of overgrowth has been lacking. We present a systematic scanning tunneling microscopy (STM) study of homoepitaxial shell growth of twinned superlattices in zinc blende InAs nanowires that transforms {111}A/B-type facets to the nonpolar {110}-type. STM imaging along the nanowires provides information on different stages of the shell growth revealing distinct differences in growth dynamics of the crystal facets and surface structures not found in the bulk. While growth of a new surface layer is initiated simultaneously (at the twin plane interface) on the {111}A and {111}B nanofacets, the step flow growth proceeds much faster on {111}A compared to {111}B leading to significant differences in roughness. Further, we observe that the atomic scale structures on the {111}B facet is different from its bulk counterpart and that shell growth on this facet occurs via steps perpendicular to the ⟨112⟩B-type directions.

| S-EPMC4382987 | biostudies-literature

Atomic Vacancies of Molybdenum Disulfide Nanoparticles Stimulate Mitochondrial Biogenesis

Project description:Atomic vacancies rich MoS2 nanoflowers stimulate mitochondrial function by reducing cellualr ROS generation and upregulating the expression of genes required for mitochondrial biogenesis.

2024-06-27 | GSE235996 | GEO

Strained few-layer MoS<sub>2</sub> with atomic copper and selectively exposed in-plane sulfur vacancies for CO<sub>2</sub> hydrogenation to methanol.

Project description:In-plane sulfur vacancies (Sv) in molybdenum disulfide (MoS2) were newly unveiled for CO2 hydrogenation to methanol, whereas edge Sv were found to facilitate methane formation. Thus, selective exposure and activation of basal plane is crucial for methanol synthesis. Here, we report a mesoporous silica-encapsulated MoS2 catalysts with fullerene-like structure and atomic copper (Cu/MoS2@SiO2). The main approach is based on a physically constrained topologic conversion of molybdenum dioxide (MoO2) to MoS2 within silica. The spherical curvature enables the generation of strain and Sv in inert basal plane. More importantly, fullerene-like structure of few-layer MoS2 can selectively expose in-plane Sv and reduce the exposure of edge Sv. After promotion by atomic copper, the resultant Cu/MoS2@SiO2 exhibits stable specific methanol yield of 6.11 molMeOH molMo-1 h-1 with methanol selectivity of 72.5% at 260 °C, much superior to its counterparts lacking the fullerene-like structure and copper decoration. The reaction mechanism and promoting role of copper are investigated by in-situ DRIFTS and in-situ XAS. Theoretical calculations demonstrate that the compressive strain facilitates Sv formation and CO2 hydrogenation, while tensile strain accelerates the regeneration of active sites, rationalizing the critical role of strain.

| S-EPMC10514200 | biostudies-literature

Evidence for a topological excitonic insulator in InAs/GaSb bilayers.

Project description:Electron-hole pairing can occur in a dilute semimetal, transforming the system into an excitonic insulator state in which a gap spontaneously appears at the Fermi surface, analogous to a Bardeen-Cooper-Schrieffer (BCS) superconductor. Here, we report optical spectroscopic and electronic transport evidence for the formation of an excitonic insulator gap in an inverted InAs/GaSb quantum-well system at low temperatures and low electron-hole densities. Terahertz transmission spectra exhibit two absorption lines that are quantitatively consistent with predictions from the pair-breaking excitation dispersion calculated based on the BCS gap equation. Low-temperature electronic transport measurements reveal a gap of ~2?meV (or ~25?K) with a critical temperature of ~10?K in the bulk, together with quantized edge conductance, suggesting the occurrence of a topological excitonic insulator phase.

| S-EPMC5719361 | biostudies-literature

Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.

Project description:Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device.

| S-EPMC4463546 | biostudies-literature

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices.

Project description:We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging.

| S-EPMC4823788 | biostudies-other

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.

Project description:Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender to meet CMOS footprint requirements while simultaneously delivering high current drive for high performance specifications and subthreshold swing below the Boltzmann limit for low power operation. In this work, VGAA nanowire GaSb/InAs C-S TFETs are demonstrated experimentally for the first time with key device properties of subthreshold swing S = 40 mV/dec (Vd = 10 mV) and current drive up to 40 μA/wire (Vd = 0.3 V, diameter d = 50 nm) while dimensions including core diameter d, shell thickness and gate length are scaled towards CMOS requirements. The experimental data in conjunction with TCAD modeling reveal interface trap density requirements to reach industry standard off-current specifications.

| S-EPMC6336843 | biostudies-literature

Universal classification of twisted, strained and sheared graphene moire superlattices.

Project description:Moiré superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated. In this scanning tunneling microscopy and density functional theory study, we have analysed graphene samples grown on multilayer graphene prepared onto SiC and on the close-packed surfaces of Re and Ir with ultra-high precision. We resolve small-angle twists and shears in graphene, and identify large unit cells comprising more than 1,000 carbon atoms and exhibiting non-trivial nanopatterns for moiré superlattices, which are commensurate to the graphene lattice. Finally, a general formalism applicable to any hexagonal moiré is presented to classify all reported structures.

| S-EPMC4867435 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data