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Anomalous Hall-like effect probe of antiferromagnetic domain wall.

ABSTRACT: Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y3Fe5O12/Ni0.50Co0.50O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. The AFDW thickness, in the order of nanometers, has been for the first time proved in experiments to increase with increasing temperature. AF spins within AFDW show the same chirality in decent and ascent branches of ferromagnetic magnetization reversal process. Moreover, the uncompensated magnetic moment at the NiCoO/Pt interface is of perpendicular magnetization anisotropy and changes linearly in magnitude with temperature due to the reduced coordination of the magnetic atoms on the AF surface. This work will help to clarify the mechanism of the spin current propagation in AF materials and fully understand the physics behind exchange bias.

SUBMITTER: Lang L

PROVIDER: S-EPMC5762948 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature

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Anomalous Hall-like effect probe of antiferromagnetic domain wall.

Lang Lili L Qiu Xuepeng X Zhou Shiming S

Scientific reports 20180110 1

Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y3Fe5O12/Ni0.50Co0.50O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. The AFDW thickness, in the order of nanometers, has been for the first time proved in experiments to increase with increasing temperature. AF spins within A ...[more]

PMID: 29321481

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