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Earth-Abundant Tin Sulfide-Based Photocathodes for Solar Hydrogen Production.


ABSTRACT: Tin-based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H2 production in acidic media without any use of sacrificial reagent. P-type SnS nanoplatelet films are coated with the n-CdS buffer layer and the TiO2 passivation layer to form type II heterojunction photocathodes. These photocathodes with subsequent deposition of Pt nanoparticles generate a photovoltage of 300 mV and a photocurrent density of 2.4 mA cm-2 at 0 V versus reversible hydrogen electrode (RHE) for water splitting under simulated visible-light illumination (? > 500 nm, Pin = 80 mW cm-2). The incident photon-to-current efficiency at 0 V versus RHE for H2 production reach a maximum of 12.7% at 575 nm with internal quantum efficiency of 13.8%. The faradaic efficiency for hydrogen evolution remains close to unity after 6000 s of illumination, confirming the robustness of the heterojunction for solar H2 production.

SUBMITTER: Cheng W 

PROVIDER: S-EPMC5770675 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature

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Earth-Abundant Tin Sulfide-Based Photocathodes for Solar Hydrogen Production.

Cheng Wei W   Singh Nirala N   Elliott Will W   Lee Joun J   Rassoolkhani Alan A   Jin Xuejun X   McFarland Eric W EW   Mubeen Syed S  

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20171016 1


Tin-based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H<sub>2</sub> production in acidic media without any use of sacrificial reagent. P-type SnS nanoplatelet films are coated with the <i>n</i>-CdS buffer layer and the TiO<sub>2</sub> passivation lay  ...[more]

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