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Diamond FinFET without Hydrogen Termination.


ABSTRACT: In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm-wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150?°C, showing 30?mA/mm current density at 150?°C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.

SUBMITTER: Huang B 

PROVIDER: S-EPMC5814511 | biostudies-literature | 2018 Feb

REPOSITORIES: biostudies-literature

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Diamond FinFET without Hydrogen Termination.

Huang Biqin B   Bai Xiwei X   Lam Stephen K SK   Tsang Kenneth K KK  

Scientific reports 20180215 1


In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm-wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demo  ...[more]

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