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Transitions from a Kondo-like diamagnetic insulator into a modulated ferromagnetic metal in FeGa3-yGey.


ABSTRACT: One initial and essential question of magnetism is whether the magnetic properties of a material are governed by localized moments or itinerant electrons. Here, we expose the case for the weakly ferromagnetic system FeGa3-y Ge y , wherein these two opposite models are reconciled, such that the magnetic susceptibility is quantitatively explained by taking into account the effects of spin-spin correlation. With the electron doping introduced by Ge substitution, the diamagnetic insulating parent compound FeGa3 becomes a paramagnetic metal as early as at y=0.01, and turns into a weakly ferromagnetic metal around the quantum critical point y=0.15. Within the ferromagnetic regime of FeGa3-y Ge y , the magnetic properties are of a weakly itinerant ferromagnetic nature, located in the intermediate regime between the localized and the itinerant dominance. Our analysis implies a potential universality for all itinerant-electron ferromagnets.

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC5879657 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature

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Transitions from a Kondo-like diamagnetic insulator into a modulated ferromagnetic metal in FeGa<sub>3-y</sub>Ge<sub>y</sub>.

Zhang Yao Y   Chen Jie-Sheng JS   Ma Jie J   Ni Jiamin J   Imai Masaki M   Michioka Chishiro C   Hadano Yuta Y   Avila Marcos A MA   Takabatake Toshiro T   Li Shiyan S   Yoshimura Kazuyoshi K  

Proceedings of the National Academy of Sciences of the United States of America 20180312 13


One initial and essential question of magnetism is whether the magnetic properties of a material are governed by localized moments or itinerant electrons. Here, we expose the case for the weakly ferromagnetic system FeGa<sub>3-<i>y</i></sub> Ge <sub><i>y</i></sub> , wherein these two opposite models are reconciled, such that the magnetic susceptibility is quantitatively explained by taking into account the effects of spin-spin correlation. With the electron doping introduced by Ge substitution,  ...[more]

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