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Annealing induced atomic rearrangements on (Ga,In)?(N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure.

ABSTRACT: We study the effects of annealing on (Ga0.64,In0.36)?(N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.

SUBMITTER: Ishikawa F

PROVIDER: S-EPMC5899128 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature

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Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure.

Ishikawa Fumitaro F Higashi Kotaro K Fuyuno Satoshi S Morifuji Masato M Kondow Masahiko M Trampert Achim A

Scientific reports 20180413 1

We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arra ...[more]

PMID: 29654243

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