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Observation of negative differential resistance in mesoscopic graphene oxide devices.

ABSTRACT: The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators.

SUBMITTER: Rathi S

PROVIDER: S-EPMC5940784 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes.

Project description:One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations.

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Differential cytotoxic effects of graphene and graphene oxide on skin keratinocytes.

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Negative differential resistance in boron nitride graphene heterostructures: physical mechanisms and size scaling analysis.

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Observation of room-temperature negative differential resistance in Gd-doped Si nanowires on Si(110) surface.

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Influence of Humidity on Contact Resistance in Graphene Devices.

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| S-EPMC6284205 | biostudies-literature

Electrodiffusioosmosis induced negative differential resistance in micro-to-millimeter size pores through a graphene/copper membrane.

Project description:Negative differential resistance (NDR) is one of the nonlinear transport phenomena in which ionic current decreases with the increase in electromotive potential. Electro-osmosis, diffusio-osmosis, and surface charge density of pores are the driving forces for observing NDR in nanoscale ion transport. Here, we report electrodiffusioosmosis induced NDR using micro to millimeter size pores in a two-dimensional (2D) graphene-coated copper (Gr/Cu) membrane. Along with NDR, we also observed ion current rectification (ICR), in which there is preferential one-directional ion flow for equal and opposite potentials. The experimentally observed NDR effect has been validated by performing ion transport simulations using Poisson-Nernst-Planck (PNP) equations and Navier-Stokes equations with the help of COMSOL Multiphysics considering salinity gradient across the membrane. Charge polarization induced electro-osmotic flow (EOF) dominates over diffusio-osmosis, causing the backflow of low concentration/conductivity solution into the pore, thereby causing NDR. This finding paves the way toward potential applications in ionic tunnel diodes as rectifiers, switches, amplifiers, and biosensors.

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