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Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures.

ABSTRACT: The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10¹⁹ cm^-3 to 3·10¹⁷ cm^-3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm² at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.

SUBMITTER: Andreev BA

PROVIDER: S-EPMC6013448 | biostudies-literature | 2018 Jun

REPOSITORIES: biostudies-literature

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Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures.

Andreev B A BA Kudryavtsev K E KE Yablonskiy A N AN Lobanov D N DN Bushuykin P A PA Krasilnikova L V LV Skorokhodov E V EV Yunin P A PA Novikov A V AV Davydov V Yu VY Krasilnik Z F ZF

Scientific reports 20180621 1

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·1019 cm-3 to 3·1017 cm-3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a thr ...[more]

PMID: 29930345

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