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Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors.

ABSTRACT: With sp²-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm² V^-1 s^-1 tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp²-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.

SUBMITTER: Dai YZ

PROVIDER: S-EPMC6022156 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature

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Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors.

Dai Ya-Zhong YZ Ai Na N Lu Yang Y Zheng Yu-Qing YQ Dou Jin-Hu JH Shi Ke K Lei Ting T Wang Jie-Yu JY Pei Jian J

Chemical science 20160613 9

With sp2-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm2 V-1 s-1 tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that e ...[more]

PMID: 30034713

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