Zero-static power radio-frequency switches based on MoS2 atomristors.

ABSTRACT: Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10?? are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10?THz for sub-?m2 switches with favorable scaling that can afford fc above 100?THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

SUBMITTER: Kim M 

PROVIDER: S-EPMC6023925 | biostudies-literature | 2018 Jun

REPOSITORIES: biostudies-literature