Browse
Submit Data
Databases
API
Help

Dataset Information

34 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Broadband, sensitive and spectrally distinctive SnS₂ nanosheet/PbS colloidal quantum dot hybrid photodetector.

ABSTRACT: Photodetectors convert photons into current or voltage outputs and are thus widely used for spectroscopy, imaging and sensing. Traditional photodetectors generally show a consistent-polarity response to incident photons within their broadband responsive spectrum. Here we introduced a new type of photodetector employing SnS₂ nanosheets sensitized with PbS colloidal quantum dots (CQDs) that are not only sensitive (~10⁵ A W^-1) and broadband (300-1000 nm) but also spectrally distinctive, that is, show distinctive (positive or negative) photoresponse toward incident photons of different wavelengths. A careful mechanism study revealed illumination-modulated Schottky contacts between SnS₂ nanosheets and Au electrodes, altering the photoresponse polarity toward incident photons of different wavelengths. Finally, we applied our SnS₂ nanosheet/PbS CQDs hybrid photodetector to differentiate the color temperature of emission from a series of white light-emitting diodes (LEDs), showcasing the unique application of our novel photodetectors.

SUBMITTER: Gao L

PROVIDER: S-EPMC6059941 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots.

Project description:Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 μs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.

| S-EPMC9506398 | biostudies-literature

Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.

Project description:In the past years, halide capping became one of the most promising strategies to passivate the surface of colloidal quantum dots (CQDs) in thin films to be used for electronic and optoelectronic device fabrication. This is due to the convenient processing, strong n-type characteristics, and ambient stability of the devices. Here, we investigate the effect of three counterions (ammonium, methylammonium, and tetrabutylammonium) in iodide salts used for treating CQD thin films and shed light on the mechanism of the ligand exchange. We obtain two- and three-dimensional square-packed PbS CQD superlattices with epitaxial merging of nearest neighbor CQDs as a direct outcome of the ligand-exchange reaction and show that the order in the layer can be controlled by the nature of the counterion. Furthermore, we demonstrate that the acidity of the environment plays an important role in the substitution of the carboxylates by iodide ions at the surface of lead chalcogenide quantum dots. Tetrabutylammonium iodide shows lower reactivity compared to methylammonium and ammonium iodide due to the nonacidity of the cation, which eventually leads to higher order but also poorer carrier transport due to incomplete removal of the pristine ligands in the QD thin film. Finally, we show that single-step blade-coating and immersion in a ligand exchange solution such as the one containing methylammonium iodide can be used to fabricate well performing bottom-gate/bottom-contact PbS CQD field effect transistors with record subthreshold swing.

| S-EPMC4690194 | biostudies-literature

Spray Coated Colloidal Quantum Dot Films for Broadband Photodetectors.

Project description:A technique for scalable spray coating of colloidal CdSeTe quantum dots (QDs) for photovoltaics and photodetector applications is presented. A mixture solvent with water and ethanol was introduced to enhance the adhesive force between QDs and the substrate interface. The performance of the detector reached the highest values with 40 spray coating cycles of QD deposition. The photodetectors without bias voltage showed broadband response in the wavelength range of 300-800 nm, and high responsivity of 15 mA/W, detectivity of more than 1011 Jones and rise time of 0.04 s. A large size QD-logo pattern film (10 × 10 cm2) prepared by the spray coating process displayed excellent uniformity of thickness and absorbance. The large area detectors (the active area 1 cm2) showed almost the same performance as the typical laboratory-size ones (the active area 0.1 cm2). Our study demonstrates that the spray coating is a very promising film fabrication technology for the industrial-scale production of optoelectronic devices.

| S-EPMC6955664 | biostudies-literature

Detecting trap states in planar PbS colloidal quantum dot solar cells.

Project description:The recently developed planar architecture (ITO/ZnO/PbS-TBAI/PbS-EDT/Au) has greatly improved the power conversion efficiency of colloidal quantum dot photovoltaics (QDPVs). However, the performance is still far below the theoretical expectations and trap states in the PbS-TBAI film are believed to be the major origin, characterization and understanding of the traps are highly demanded to develop strategies for continued performance improvement. Here employing impedance spectroscopy we detect trap states in the planar PbS QDPVs. We determined a trap state of about 0.34 eV below the conduction band with a density of around 3.2 × 1016 cm-3 eV-1. Temperature dependent open-circuit voltage analysis, temperature dependent diode property analysis and temperature dependent build-in potential analysis consistently denotes an below-bandgap activation energy of about 1.17-1.20 eV.

| S-EPMC5109221 | biostudies-literature

Rapid Photonic Processing of High-Electron-Mobility PbS Colloidal Quantum Dot Transistors.

Project description:Recent advances in solution-processable semiconducting colloidal quantum dots (CQDs) have enabled their use in a range of (opto)electronic devices. In most of these studies, device fabrication relied almost exclusively on thermal annealing to remove organic residues and enhance inter-CQD electronic coupling. Despite its widespread use, however, thermal annealing is a lengthy process, while its effectiveness to eliminate organic residues remains limited. Here, we exploit the use of xenon flash lamp sintering to post-treat solution-deposited layers of lead sulfide (PbS) CQDs and their application in n-channel thin-film transistors (TFTs). The process is simple, fast, and highly scalable and allows for efficient removal of organic residues while preserving both quantum confinement and high channel current modulation. Bottom-gate, top-contact PbS CQD TFTs incorporating SiO2 as the gate dielectric exhibit a maximum electron mobility of 0.2 cm2 V-1 s-1, a value higher than that of control transistors (≈10-2 cm2 V-1 s-1) processed via thermal annealing for 30 min at 120 °C. Replacing SiO2 with a polymeric dielectric improves the transistor's channel interface, leading to a significant increase in electron mobility to 3.7 cm2 V-1 s-1. The present work highlights the potential of flash lamp annealing as a promising method for the rapid manufacture of PbS CQD-based (opto)electronic devices and circuits.

| S-EPMC7467567 | biostudies-literature

A colloidal quantum dot infrared photodetector and its use for intraband detection.

Project description:Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices.

| S-EPMC6509134 | biostudies-literature

Stoichiometric control of the density of states in PbS colloidal quantum dot solids.

Project description:Colloidal quantum dots, and nanostructured semiconductors in general, carry the promise of overcoming the limitations of classical materials in chemical and physical properties and in processability. However, sufficient control of electronic properties, such as carrier concentration and carrier mobility, has not been achieved until now, limiting their application. In bulk semiconductors, modifications of electronic properties are obtained by alloying or doping, an approach that is not viable for structures in which the surface is dominant. The electronic properties of PbS colloidal quantum dot films are fine-tuned by adjusting their stoichiometry, using the large surface area of the nanoscale building blocks. We achieve an improvement of more than two orders of magnitude in the hole mobility, from below 10-3 to above 0.1 cm2/V⋅s, by substituting the iodide ligands with sulfide while keeping the electron mobility stable (~1 cm2/V⋅s). This approach is not possible in bulk semiconductors, and the developed method will likely contribute to the improvement of solar cell efficiencies through better carrier extraction and to the realization of complex (opto)electronic devices.

| S-EPMC5621976 | biostudies-literature

Ultrafast and stable planar photodetector based on SnS2 nanosheets/perovskite structure.

Project description:Two-dimensional (2D) transition metal dichalcogenides are promising candidates of photodetectors where they are commonly grown parallel to the substrate due to their 2D characteristics in micrometer scales from exfoliation of bulk crystals or through high temperature chemical vapor deposition (CVD) methods. In this study, semi-hexagonal vertical nanosheets of SnS2 layered have been fabricated on FTO substrate without using Sn source through CVD method at relatively low temperature (500 °C). Due to exceptional band alignment of triple cation lead perovskite (TCLP) with semi-hexagonal SnS2 nanosheets, an improved photodetector has been fabricated. This type of photodetectors fabricated through lithography-free and electrodes metallization free approach with remarkable fast response (20.7 µs/31.4 µs as rising /falling times), showed high photoresponsivity, external quantum efficiency and detectivity of 1.84 AW-1, 513% and 1.69 × 1011, respectively under illumination of incident light with wavelength of 445 nm. The stability of the photodetectors has been studied utilizing a protective PMMA layer on the perovskite layer in 100% humidity. The introduced growth and fabrication process of the planar photodetector, including one/two dimensional interface through the edges/basal planes of layered materials with perovskite film, paves a way for the large scale, cost-effective and high-performance optoelectronic devices.

| S-EPMC8481477 | biostudies-literature

The Influence of Doping on the Optoelectronic Properties of PbS Colloidal Quantum Dot Solids.

Project description:We report on an extensive spectroscopic investigation of the impact of substitutional doping on the optoelectronic properties of PbS colloidal quantum dot (CQD) solids. N-doping is provided by Bi incorporation during CQD synthesis as well as post-synthetically via cation exchange reactions. The spectroscopic data indicate a systematic quenching of the excitonic absorption and luminescence and the appearance of two dopant-induced contributions at lower energies to the CQD free exciton. Temperature-dependent photoluminescence indicates the presence of temperature-activated detrapping and trapping processes of photoexcitations for the films doped during and after synthesis, respectively. The data are consistent with a preferential incorporation of the dopants at the QDs surface in the case of the cation-exchange treated films versus a more uniform doping profile in the case of in-situ Bi incorporation during synthesis. Time-resolved experiments indicate the presence of fast dopant- and excitation-dependent recombination channels attributed to Auger recombination of negatively charged excitons, formed due to excess of dopant electrons. The data indicate that apart from dopant compensation and filling of dopant induced trap states, a fraction of the Bi ionized electrons feeds the QD core states resulting in n-doping of the semiconductor, confirming reported work on devices based on such doped CQD material.

| S-EPMC4705463 | biostudies-literature

Highly Responsive Mid-Infrared Metamaterial Enhanced Heterostructure Photodetector Formed out of Sintered PbSe/PbS Colloidal Quantum Dots.

Project description:Efficient and simple-to-fabricate light detectors in the mid infrared (MIR) spectral range are of great importance for various applications in existing and emerging technologies. Here, we demonstrate compact and efficient photodetectors operating at room temperature in a wavelength range of 2710-4250 nm with responsivities as high as 375 and 4 A/W. Key to the high performance is the combination of a sintered colloidal quantum dot (CQD) lead selenide (PbSe) and lead sulfide (PbS) heterojunction photoconductor with a metallic metasurface perfect absorber. The combination of this photoconductor stack with the metallic metasurface perfect absorber provides an overall ∼20-fold increase of the responsivity compared against reference sintered PbSe photoconductors. More precisely, the introduction of a PbSe/PbS heterojunction increases the responsivity by a factor of ∼2 and the metallic metasurface enhances the responsivity by an order of magnitude. The metasurface not only enhances the light-matter interaction but also acts as an electrode to the detector. Furthermore, fabrication of our devices relies on simple and inexpensive methods. This is in contrast to most of the currently available (state-of-the-art) MIR photodetectors that rely on rather expensive as well as nontrivial fabrication technologies that often require cooling for efficient operation.

| S-EPMC9982815 | biostudies-literature