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Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

ABSTRACT: It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H?/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.

SUBMITTER: Wang S

PROVIDER: S-EPMC6069281 | biostudies-literature | 2018 Jun

REPOSITORIES: biostudies-literature

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Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

Wang Shibo S Wang Xinqiang X Chen Zhaoying Z Wang Ping P Qi Qi Q Zheng Xiantong X Sheng Bowen B Liu Huapeng H Wang Tao T Rong Xin X Li Mo M Zhang Jian J Yang Xuelin X Xu Fujun F Shen Bo B

Sensors (Basel, Switzerland) 20180628 7

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10<sup>13</sup> cm<sup>−2</sup> on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to ...[more]

PMID: 29958432

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