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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2.


ABSTRACT: Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers. The QSHI nature of single-layer 1T'-WSe2 is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.

SUBMITTER: Ugeda MM 

PROVIDER: S-EPMC6109167 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature

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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe<sub>2</sub>.

Ugeda Miguel M MM   Pulkin Artem A   Tang Shujie S   Ryu Hyejin H   Wu Quansheng Q   Zhang Yi Y   Wong Dillon D   Pedramrazi Zahra Z   Martín-Recio Ana A   Chen Yi Y   Wang Feng F   Shen Zhi-Xun ZX   Mo Sung-Kwan SK   Yazyev Oleg V OV   Crommie Michael F MF  

Nature communications 20180824 1


Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe<sub>2</sub>. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T'-WSe<sub>2</sub> and a semiconducting  ...[more]

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