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Nanophotonic Pockels modulators on a silicon nitride platform.


ABSTRACT: Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33?GHz and data rates of 40?Gbps are shown, as well as low propagation losses (????1?dB?cm-1). A half-wave voltage-length product of 3.2?V?cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

SUBMITTER: Alexander K 

PROVIDER: S-EPMC6110768 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature

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Nanophotonic Pockels modulators on a silicon nitride platform.

Alexander Koen K   George John P JP   Verbist Jochem J   Neyts Kristiaan K   Kuyken Bart B   Van Thourhout Dries D   Beeckman Jeroen J  

Nature communications 20180827 1


Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidth  ...[more]

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