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Data on the early oxidation of SiO2-coated pure Ti and bulk Ti5Si3 at 800?°C.

ABSTRACT: Oxidation of pure Ti sputtered with a 250?nm layer of amorphous SiO2 and bulk Ti5Si3 was conducted at 800?°C for 2 or 32?h in a 1 standard cubic centimeter per minute (SCCM) O2/4 SCCM Ar environment (approximately pO2 = 0.2?atm/20.3?kPa). Specimens were characterized using transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy. The data in this article accompanies research article "Early oxidation behavior of Si-coated titanium" [1], which contains further discussion. The data for this article is hosted at the Materials Commons data repository and is available for download at https://materialscommons.org/mcapp/#/data/dataset/b8bc8038-a735-4cb9-9a9e-a0fb912b248c.

SUBMITTER: Chou K 

PROVIDER: S-EPMC6143759 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature

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Data on the early oxidation of SiO<sub>2</sub>-coated pure Ti and bulk Ti<sub>5</sub>Si<sub>3</sub> at 800 °C.

Chou Kathleen K   Chu Peng-Wei PW   Marquis Emmanuelle A EA  

Data in brief 20180901

Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO<sub>2</sub> and bulk Ti<sub>5</sub>Si<sub>3</sub> was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O<sub>2</sub>/4 SCCM Ar environment (approximately pO<sub>2</sub> = 0.2 atm/20.3 kPa). Specimens were characterized using transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy. The data in this article accompanies research article "Ear  ...[more]

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