Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Low Temperature Synthesis of Lithium-Doped Nanocrystalline Diamond Films with Enhanced Field Electron Emission Properties.

ABSTRACT: Low temperature (350 °C) grown conductive nanocrystalline diamond (NCD) films were realized by lithium diffusion from Cr-coated lithium niobate substrates (Cr/LNO). The NCD/Cr/LNO films showed a low resistivity of 0.01 ?·cm and excellent field electron emission characteristics, viz. a low turn-on field of 2.3 V/µm, a high-current density of 11.0 mA/cm² (at 4.9 V/m), a large field enhancement factor of 1670, and a life-time stability of 445 min (at 3.0 mA/cm²). The low temperature deposition process combined with the excellent electrical characteristics offers a new prospective for applications based on temperature sensitive materials.

SUBMITTER: Sankaran KJ

PROVIDER: S-EPMC6164399 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Low Temperature Synthesis of Lithium-Doped Nanocrystalline Diamond Films with Enhanced Field Electron Emission Properties.

Sankaran Kamatchi Jothiramalingam KJ Panda Kalpataru K Hsieh Ping-Yen PY Pobedinskas Paulius P Park Jeong Young JY Van Bael Marlies K MK Tai Nyan-Hwa NH Lin I-Nan IN Haenen Ken K

Nanomaterials (Basel, Switzerland) 20180824 9

Low temperature (350 °C) grown conductive nanocrystalline diamond (NCD) films were realized by lithium diffusion from Cr-coated lithium niobate substrates (Cr/LNO). The NCD/Cr/LNO films showed a low resistivity of 0.01 Ω·cm and excellent field electron emission characteristics, viz. a low turn-on field of 2.3 V/µm, a high-current density of 11.0 mA/cm² (at 4.9 V/m), a large field enhancement factor of 1670, and a life-time stability of 445 min (at 3.0 mA/cm²). The low temperature deposition proc ...[more]

PMID: 30149533

Similar Datasets

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films.

Project description:Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/μm with high EFE current density of 6.2 mA/cm2 (at an applied field of 20.5 V/μm). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy (STM) based current imaging tunneling spectroscopy (CITS) reveal that the UNCD grain boundaries are the preferred electron emission sites. The two scanning probe microscopic results supplement each other well. However, the PF-TUNA measurement is found to be better for explaining the local electron emission behavior than the STM-based CITS technique. The formation of Ag nanoparticles induced abundant sp2 nanographitic phases along the grain boundaries facilitate the easy transport of electrons and is believed to be a prime factor in enhancing the conductivity/EFE properties of UNCD films. The nanoscale understanding on the origin of electron emission sites in Ag-ion implanted/annealed UNCD films using the scanning probe microscopic techniques will certainly help in developing high-brightness electron sources for flat-panel displays applications.

| S-EPMC5701233 | biostudies-literature

Gas sensing properties of nanocrystalline diamond at room temperature.

Project description:This study describes an integrated NH3 sensor based on a hydrogenated nanocrystalline diamond (NCD)-sensitive layer coated on an interdigitated electrode structure. The gas sensing properties of the sensor structure were examined using a reducing gas (NH3) at room temperature and were found to be dependent on the electrode arrangement. A pronounced response of the sensor, which was comprised of dense electrode arrays (of 50 µm separation distance), was observed. The sensor functionality was explained by the surface transfer doping effect. Moreover, the three-dimensional model of the current density distribution of the hydrogenated NCD describes the transient flow of electrons between interdigitated electrodes and the hydrogenated NCD surface, that is, the formation of a closed current loop.

| S-EPMC4273209 | biostudies-literature

Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

Project description:Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

| S-EPMC4781860 | biostudies-literature

Flexible nanophosphor films doped with Mie resonators for enhanced out-coupling of the emission.

Project description:Herein, we present a general method to prepare self-standing flexible photoluminescent coatings of controlled opacity for integration into light-emitting diodes (LEDs) employing cost-effective solution-processing methods. From colloidal suspensions of nano-sized phosphors, we fabricate light-emitting transparent films that can be doped with spherical scatterers, which act as Mie resonators that trigger a controlled photoluminescence enhancement, evidenced by the reduction of the guided light along the layer. This results in an enhanced emission compared to that extracted from a bare phosphor layer. We show not only that emission is visible under ultraviolet-LED illumination for both rigid and flexible versions of the coatings, but we also prove the feasibility of the integration of these flexible conversion layers into such devices. We believe these results can contribute to develop more efficient and cost-effective illumination sources by providing efficient and easy-to-handle conversion layers susceptible to excitation by LEDs emitting at wavelengths in the near UV region.

| S-EPMC6394886 | biostudies-literature

High-temperature high-pressure phases of lithium from electron force field (eFF) quantum electron dynamics simulations.

Project description:We recently developed the electron force field (eFF) method for practical nonadiabatic electron dynamics simulations of materials under extreme conditions and showed that it gave an excellent description of the shock thermodynamics of hydrogen from molecules to atoms to plasma, as well as the electron dynamics of the Auger decay in diamondoids following core electron ionization. Here we apply eFF to the shock thermodynamics of lithium metal, where we find two distinct consecutive phase changes that manifest themselves as a kink in the shock Hugoniot, previously observed experimentally, but not explained. Analyzing the atomic distribution functions, we establish that the first phase transition corresponds to (i) an fcc-to-cI16 phase transition that was observed previously in diamond anvil cell experiments at low temperature and (ii) a second phase transition that corresponds to the formation of a new amorphous phase (amor) of lithium that is distinct from normal molten lithium. The amorphous phase has enhanced valence electron-nucleus interactions due to localization of electrons into interstitial locations, along with a random connectivity distribution function. This indicates that eFF can characterize and compute the relative stability of states of matter under extreme conditions (e.g., warm dense matter).

| S-EPMC3174647 | biostudies-literature

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

Project description:Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

| S-EPMC3474993 | biostudies-other

Electron Beam Transparent Boron Doped Diamond Electrodes for Combined Electrochemistry-Transmission Electron Microscopy.

Project description:The majority of carbon based transmission electron microscopy (TEM) platforms (grids) have a significant sp2 carbon component. Here, we report a top down fabrication technique for producing freestanding, robust, electron beam transparent and conductive sp3 carbon substrates from boron doped diamond (BDD) using an ion milling/polishing process. X-ray photoelectron spectroscopy and electrochemical measurements reveal the sp3 carbon character and advantageous electrochemical properties of a BDD electrode are retained during the milling process. TEM diffraction studies show a dominant (110) crystallographic orientation. Compared with conventional carbon TEM films on metal supports, the BDD-TEM electrodes offer superior thermal, mechanical and electrochemical stability properties. For the latter, no carbon loss is observed over a wide electrochemical potential range (up to 1.80 V vs RHE) under prolonged testing times (5 h) in acid (comparable with accelerated stress testing protocols). This result also highlights the use of BDD as a corrosion free electrocatalyst TEM support for fundamental studies, and in practical energy conversion applications. High magnification TEM imaging demonstrates resolution of isolated, single atoms on the BDD-TEM electrode during electrodeposition, due to the low background electron scattering of the BDD surface. Given the high thermal conductivity and stability of the BDD-TEM electrodes, in situ monitoring of thermally induced morphological changes is also possible, shown here for the thermally induced crystallization of amorphous electrodeposited manganese oxide to the electrochemically active γ-phase.

| S-EPMC9585633 | biostudies-literature

Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures.

Project description:Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

| S-EPMC4941520 | biostudies-literature

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.

Project description:Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V-1 s-1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

| S-EPMC10987156 | biostudies-literature

Photoluminescence and Stoichiometry Correlation in Nanocrystalline EuO x Thin Films: Tunable Color Emission.

Project description:The development of broadband and ultracompact optoelectronic devices relies on the possibility of fabricating bright and tunable emitters at the nanoscale. Here, we show emission from EuO x (1 ? x < 1.4) thin films on silicon formed by nanocrystals with average sizes in the range of 5 nm. The photoluminescence emission of the nano-EuO x films is tunable as a function of the oxygen concentration changing from a green broadband Eu2+-related emission to a narrow red Eu3+-related emission. To reach these results has been instrumental through the use of a new methodology specially designed to achieve high-quality europium oxide films whose compositional properties are controlled by the growth base pressure and preserved thanks to a chemically stable and transparent cover layer of Al2O3. Our findings confirm the outstanding potential of nanostructured EuO x films as "one-compound" optical elements with tunable emission properties for their implementation in integrated silicon-based devices.

| S-EPMC7370298 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data