Ontology highlight
ABSTRACT:
SUBMITTER: Hu J
PROVIDER: S-EPMC6177418 | biostudies-literature | 2018 Oct
REPOSITORIES: biostudies-literature
Scientific reports 20181009 1
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text] with a relative uncertainty of 10<sup>-7</sup>. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standa ...[more]