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Fabrication of buried nanostructures by atomic layer deposition.

ABSTRACT: We present a method for fabricating buried nanostructures by growing a dielectric cover layer on a corrugated surface profile by atomic layer deposition of TiO₂. Selecting appropriate process parameters, the conformal growth of TiO₂ results in a smooth, nearly flat-top surface of the structure. Such a hard surface can be easily cleaned without damage, making the nanostructure reusable after contamination. The technique has wide applicability in resonance-domain diffractive optics and in realization of quasi-planar metamaterials. We discuss design issues of such optical elements and demonstrate the method by fabricating narrow-band spectral filters based on the guided-mode resonance effect. These elements have strong potential for, e.g., sensing applications in harsh conditions.

SUBMITTER: Ali R

PROVIDER: S-EPMC6180036 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature

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Fabrication of buried nanostructures by atomic layer deposition.

Ali Rizwan R Saleem Muhammad Rizwan MR Roussey Matthieu M Turunen Jari J Honkanen Seppo S

Scientific reports 20181010 1

We present a method for fabricating buried nanostructures by growing a dielectric cover layer on a corrugated surface profile by atomic layer deposition of TiO<sub>2</sub>. Selecting appropriate process parameters, the conformal growth of TiO<sub>2</sub> results in a smooth, nearly flat-top surface of the structure. Such a hard surface can be easily cleaned without damage, making the nanostructure reusable after contamination. The technique has wide applicability in resonance-domain diffractive ...[more]

PMID: 30305641

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Project description:Atomic layer deposition (ALD) of alumina using trimethylaluminum (TMA) has technological importance in microelectronics. This process has demonstrated a high potential in applications of protective coatings on Cu surfaces for control of diffusion of Cu in Cu2S films in photovoltaic devices and sintering of Cu-based nanoparticles in liquid phase hydrogenation reactions. With this motivation in mind, the reaction between TMA and oxygen was investigated on Cu(111) and Cu2O/Cu(111) surfaces. TMA did not adsorb on the Cu(111) surface, a result consistent with density functional theory (DFT) calculations predicting that TMA adsorption and decomposition are thermodynamically unfavorable on pure Cu(111). On the other hand, TMA readily adsorbed on the Cu2O/Cu(111) surface at 473 K resulting in the reduction of some surface Cu(1+) to metallic copper (Cu(0)) and the formation of a copper aluminate, most likely CuAlO2. The reaction is limited by the amount of surface oxygen. After the first TMA half-cycle on Cu2O/Cu(111), two-dimensional (2D) islands of the aluminate were observed on the surface by scanning tunneling microscopy (STM). According to DFT calculations, TMA decomposed completely on Cu2O/Cu(111). High-resolution electron energy loss spectroscopy (HREELS) was used to distinguish between tetrahedrally (Altet) and octahedrally (Aloct) coordinated Al(3+) in surface adlayers. TMA dosing produced an aluminum oxide film, which contained more octahedrally coordinated Al(3+) (Altet/Aloct HREELS peak area ratio ? 0.3) than did dosing O2 (Altet/Aloct HREELS peak area ratio ? 0.5). After the first ALD cycle, TMA reacted with both Cu2O and aluminum oxide surfaces in the absence of hydroxyl groups until film closure by the fourth ALD cycle. Then, TMA continued to react with surface Al-O, forming stoichiometric Al2O3. O2 half-cycles at 623 K were more effective for carbon removal than O2 half-cycles at 473 K or water half-cycles at 623 K. The growth rate was approximately 3-4 Å/cycle for TMA+O2 ALD (O2 half-cycles at 623 K). No preferential growth of Al2O3 on the steps of Cu(111) was observed. According to STM, Al2O3 grows homogeneously on Cu(111) terraces.

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Fabrication of buried nanostructures by atomic layer deposition.

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Fabrication of buried nanostructures by atomic layer deposition.

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